发明名称 SURFACE DOSE RETENTION OF DOPANTS BY PRE-AMORPHIZATION AND POST IMPLANT PASSIVATION TREATMENTS
摘要 The invention generally relates to pre-implant and post-implant treatments to promote the retention of dopants near the surface of an implanted substrate. The pre-implant treatments include forming a plasma from an inert gas and implanting the inert gas into the substrate to render an upper portion of the substrate amorphous. The post-implant treatment includes forming a passivation layer on the upper surface of the substrate after doping the substrate in order to retain the dopant during a subsequent activation anneal.
申请公布号 US2012289036(A1) 申请公布日期 2012.11.15
申请号 US201213449180 申请日期 2012.04.17
申请人 SANTHANAM KARTIK;VELLAIKAL MANOJ;TA YEN B.;SCOTNEY-CASTLE MATTHEW D.;PORSHNEV PETER I.;APPLIED MATERIALS, INC. 发明人 SANTHANAM KARTIK;VELLAIKAL MANOJ;TA YEN B.;SCOTNEY-CASTLE MATTHEW D.;PORSHNEV PETER I.
分类号 H01L21/265 主分类号 H01L21/265
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