发明名称 |
SURFACE DOSE RETENTION OF DOPANTS BY PRE-AMORPHIZATION AND POST IMPLANT PASSIVATION TREATMENTS |
摘要 |
The invention generally relates to pre-implant and post-implant treatments to promote the retention of dopants near the surface of an implanted substrate. The pre-implant treatments include forming a plasma from an inert gas and implanting the inert gas into the substrate to render an upper portion of the substrate amorphous. The post-implant treatment includes forming a passivation layer on the upper surface of the substrate after doping the substrate in order to retain the dopant during a subsequent activation anneal.
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申请公布号 |
US2012289036(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201213449180 |
申请日期 |
2012.04.17 |
申请人 |
SANTHANAM KARTIK;VELLAIKAL MANOJ;TA YEN B.;SCOTNEY-CASTLE MATTHEW D.;PORSHNEV PETER I.;APPLIED MATERIALS, INC. |
发明人 |
SANTHANAM KARTIK;VELLAIKAL MANOJ;TA YEN B.;SCOTNEY-CASTLE MATTHEW D.;PORSHNEV PETER I. |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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