| 摘要 |
In an IGBT (10), a trench (70a, 70b) extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench (70a, 70b) is covered with an insulating film. A gate is placed inside the trench (70a, 70b). An emitter and a collector are formed on an upper surface and a lower surface of the semiconductor substrate, respectively. An emitter region, a body region, a drift region, and a collector region are formed in the semiconductor substrate. The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode. The body region is formed of a p-type semiconductor, is in contact with the insulating film below the emitter region, is in contact with the insulating film of an inner corner portion (72-1, 72-2) of the trench (70a, 70b), and is in ohmic contact with the emitter electrode. |
