发明名称 DUAL-DAMASCENE BIT LINE STRUCTURES FOR MICROELECTRONIC DEVICES AND METHODS OF FABRICATING MICROELECTRONIC DEVICES
摘要 Methods of fabricating components for microelectronic devices, microelectronic devices including memory cells or other components, and computers including memory devices include forming memory cells. For example, one embodiment is directed toward a method of fabricating a memory cell on a workpiece having a substrate, a plurality of active areas in the substrate, and a dielectric layer over the active areas. One embodiment of the method includes constructing bit line contact openings in the dielectric layer over first portions of the active areas and cell plug openings over second portions of the active areas. The method also includes depositing a first conductive material into the bit line contact openings to form bit line contacts and into the cell plug openings to form cell plugs. A conductive line is formed in a trench in the substrate.
申请公布号 US2012285926(A1) 申请公布日期 2012.11.15
申请号 US201213560836 申请日期 2012.07.27
申请人 TANG SANG DANG;MICRON TECHNOLOGY, INC. 发明人 TANG SANG DANG
分类号 H05K3/10;G11C7/00;H01L21/4763;H01L21/8239;H01L21/8242 主分类号 H05K3/10
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