A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.
申请公布号
WO2012154747(A2)
申请公布日期
2012.11.15
申请号
WO2012US36954
申请日期
2012.05.08
申请人
LAM RESEARCH CORPORATION;FANG, TONG;KIM, YUNSANG, S.;FISCHER, ANDREAS