发明名称 FOAMING PROCESS FOR PREPARING WAFER-LEVEL GLASS MICRO-CAVITIES
摘要 A foaming process for preparing wafer-level glass micro-cavities that include, etching silicon trenches on a Si wafer through Si micro-machining process; placing high-temperature outgassing agent in the silicon trenches; bonding the Si wafer with a piece of glass wafer by anodic bonding to form sealing cavities; heating up the bonded wafer, and holding the temperature the high-temperature outgassing agent such that the molten glass corresponding to the sealing cavities deforms and structures corresponding to the silicon trenches are formed in the glass; cooling down to obtain wafer-level glass micro-flow channels.
申请公布号 US2012285198(A1) 申请公布日期 2012.11.15
申请号 US201213526179 申请日期 2012.06.18
申请人 SHANG JINTANG 发明人 SHANG JINTANG
分类号 C03B19/08 主分类号 C03B19/08
代理机构 代理人
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