| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in reliability. <P>SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a thermally-degradable resin layer on a base material; fixing a silicon wafer on which a plurality of through plugs penetrating from a principal surface to a rear face are provided, and the base material via the thermally-degradable resin layer; providing first semiconductor elements electrically connected to the through plugs, respectively, on the rear face of the silicon wafer; forming an encapsulation material layer encapsulating the plurality of first semiconductor elements on the rear face of the silicon wafer by using a semiconductor encapsulating resin composition; and degrading the thermally-degradable resin layer by a heat treatment and isolating the base material from the silicon wafer to expose the principal surface of the silicon wafer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
