| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an image pickup device that allows suppression of ununiformity of the film thickness of color filters and to provide a method of manufacturing the same. <P>SOLUTION: A solid-state image pickup device comprises: a semiconductor substrate 21; a base layer (25) formed on the semiconductor substrate 21 and in which its top surface equivalent to a pixel region 3 is lower than its top surface equivalent to a peripheral circuit region 5; a plurality of color filters 27 arranged two-dimensionally on the top surface equivalent to the pixel region 3 of the base layer (25); and a partition wall 29 arranged between each of the color filters 27. In a cross section orthogonal to the top surface equivalent to the pixel region 3 of the base layer (25), the occupied area of the partition wall 29 arranged in an outside portion (9) in contact with the peripheral circuit region 5 is smaller than the occupied area of the partition wall 29 arranged in a center portion (11) of the pixel region 3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
