RIDGE TYPE SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a ridge type semiconductor laser or the like, which can precisely and easily manufacture the same.

SOLUTION: A method for manufacturing a ridge type semiconductor laser comprises: a semiconductor stacked layer forming step S1 for forming a semiconductor stacked layer 23 having an active layer 13 and an etching stop layer 17; a first semiconductor stacked layer etching step S3; a semiconductor part forming step S5; a ridge waveguide part forming step S7; and a semiconductor diffracting grating element forming step S9. A first mask part patterning step S7-1 in the ridge waveguide part forming step S7 and a second mask part patterning step S9-1 in the semiconductor diffracting grating element forming step S9 are performed together at a time by a pattern transfer from a master pattern 40M. A second semiconductor stacked layer etching step S7-3 in the ridge waveguide part forming step S7 and a first semiconductor part etching step S9-3 in the semiconductor diffracting grating element forming step S9 are performed together at a time.

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