发明名称 |
Method for Manufacturing Semiconductor Layer, Method for Manufacturing Photoelectric Conversion Device, and Semiconductor Layer Forming Solution |
摘要 |
It is an object of the present invention to provide a method for manufacturing a semiconductor layer, a method for manufacturing a photoelectric conversion device, and a semiconductor layer forming solution which are able to easily manufacture a good semiconductor layer having a desired thickness. To accomplish this object, a starting solution containing a metallic element, a chalcogen organic compound and a Lewis base organic compound is initially produced. Next, heating the starting solution produces fine particles. The fine particles contain a metal chalcogenide which is a compound of the metallic element and a chalcogen element included in the chalcogen organic compound. A semiconductor layer is formed by using a semiconductor layer forming solution in which the fine particles are dispersed.
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申请公布号 |
US2012288988(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201013511983 |
申请日期 |
2010.12.16 |
申请人 |
INAI SEIICHIRO;NISHIMURA DAISUKE;TANAKA ISAMU;KYOCERA CORPORATION |
发明人 |
INAI SEIICHIRO;NISHIMURA DAISUKE;TANAKA ISAMU |
分类号 |
H01L31/18;H01L21/368 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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