发明名称 Method for Manufacturing Semiconductor Layer, Method for Manufacturing Photoelectric Conversion Device, and Semiconductor Layer Forming Solution
摘要 It is an object of the present invention to provide a method for manufacturing a semiconductor layer, a method for manufacturing a photoelectric conversion device, and a semiconductor layer forming solution which are able to easily manufacture a good semiconductor layer having a desired thickness. To accomplish this object, a starting solution containing a metallic element, a chalcogen organic compound and a Lewis base organic compound is initially produced. Next, heating the starting solution produces fine particles. The fine particles contain a metal chalcogenide which is a compound of the metallic element and a chalcogen element included in the chalcogen organic compound. A semiconductor layer is formed by using a semiconductor layer forming solution in which the fine particles are dispersed.
申请公布号 US2012288988(A1) 申请公布日期 2012.11.15
申请号 US201013511983 申请日期 2010.12.16
申请人 INAI SEIICHIRO;NISHIMURA DAISUKE;TANAKA ISAMU;KYOCERA CORPORATION 发明人 INAI SEIICHIRO;NISHIMURA DAISUKE;TANAKA ISAMU
分类号 H01L31/18;H01L21/368 主分类号 H01L31/18
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