| 摘要 |
The present invention is a method for determining the film thickness of an SOI layer in an SOI wafer having at least an insulation layer and an SOI layer consisting of silicon single crystals formed on the insulation layer, the method for determining the film thickness of an SOI layer of an SOI wafer being characterized in that electron beams are radiated onto the surface of the SOI layer, specific elements in the insulation layer are excited by the electron beams that have been attenuated and have passed through the SOI layer, the characteristic X rays that are thereby generated are detected from the surface of the SOI layer on the side exposed to the electron beams, and the thickness of the SOI layer is calculated on the basis of the intensity of the detected characteristic X rays. As a result, provided is a method for determining the film thickness of the SOI layer of the SOI wafer in which, even if the film thickness of the SOI layer of the SOI wafer is thin, film thickness can be precisely determined with high spatial resolution within a microregion in the SOI layer. |
