摘要 |
<p>The present invention relates to the technical field of ion implantation apparatus and ion implantation material processing. A method and apparatus for implanting laser-induced plasma into a workpiece. A high-power short-pulse intense laser beam stimulated by a laser impacts a metal foil (13). The metal foil instantaneously vaporizes and ionizes by absorbing the energy of the high-power short-pulse laser beam, thereby generating a high-temperature plasma. The plasma is constituted by metal ions (11), electrons (12), and uncharged atoms. The plasma expands and explodes by absorbing subsequent laser energies. During the plasma explosion process, a repulsive force between the electrons (12) and a negative potential-connecting workpiece (6) makes the electrons (6) to move away from the workpiece (6). A positively charged plate neutralizes some of the electrons (12). An attractive force between metal cations (11) and the negative potential workpiece (6) makes the metal ions (11) to move towards the workpiece (6). By superimposition of the shock wave effect formed by the expansion and explosion of the plasma and the attraction effect of electric fields, the metal ions are blasted at a great speed onto a surface of the workpiece (6), thus completing the implantation of metal ions.</p> |
申请人 |
JIANGSU UNIVERSITY;AIR FORCE ENGINEERING UNIVERSITY OF THE CHINESE PEOPLE'S LIBERATION ARMY;REN, XUDONG;LI, YINGHONG;HUANGFU, YONGZHUO;WANG, CHENG;RUAN, LIANG;HE, WEIFENG;ZHOU, XIN;CHU, WEI;ZHANG, YONGKANG;DAI, FENGZE;ZHANG, TIAN |
发明人 |
REN, XUDONG;LI, YINGHONG;HUANGFU, YONGZHUO;WANG, CHENG;RUAN, LIANG;HE, WEIFENG;ZHOU, XIN;CHU, WEI;ZHANG, YONGKANG;DAI, FENGZE;ZHANG, TIAN |