| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in reliability. <P>SOLUTION: A semiconductor device manufacturing method comprises the steps of: preparing a structure including a silicon wafer 102 on which a plurality of buried conductive parts (buried conductive parts 106) are provided on a principal surface, and a plurality of first semiconductor elements (semiconductor chips 108) arranged on the principal surface of the silicon wafer 102 and electrically connected with the buried conductive parts 106, respectively; forming an encapsulation material layer 110 encapsulating the plurality of semiconductor chips 108 that are on the principal surface of the silicon wafer 102 by using a resin composition for semiconductor encapsulation; and grinding a rear face of the silicon wafer 102 to expose the buried conductive parts 106 on the rear face to become through plugs 105. <P>COPYRIGHT: (C)2013,JPO&INPIT |
