SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having a structure in which a first transistor and a second transistor are formed on the same semiconductor substrate so as to share the drain region and the source region with each other, which can efficiently form embedded insulation films directly below the source region and the drain region of each transistor.

SOLUTION: A semiconductor device manufacturing method comprises: forming trenches correspondingly to a source region and a drain region of respective transistors on a semiconductor substrate; filling the trench by sequentially forming a SiGe mixed crystal layer and a semiconductor layer; removing the SiGe mixed crystal layers directly below the source region of the first transistor and the drain region of the second transistor via an element isolation groove by selective etching; and selectively etching and removing the SiGe mixed crystal layer directly below a diffusion layer shared as the drain region of the first transistor and the source region of the second transistor through a hole formed in the diffusion region.

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