| 发明名称 |
COMPOSITION FOR FORMATION OF PHOTOSENSITIVE RESIST UNDERLAYER FILM AND METHOD FOR FORMATION OF RESIST PATTERN |
| 摘要 |
A composition for forming a photosensitive resist underlayer film and a method for forming a resist pattern. The composition for forming a photosensitive resist underlayer film includes a polymer having a structural unit of Formula (1), a compound having at least two vinyl ether groups, a photo-acid generator; and a solvent: where R1 is a hydrogen atom or a methyl group, R2 is a C1-4 alkyl group, and i is an integer of 0 to 4.
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| 申请公布号 |
US2012288795(A1) |
申请公布日期 |
2012.11.15 |
| 申请号 |
US201013522392 |
申请日期 |
2010.11.16 |
| 申请人 |
UMEZAKI MAKIKO;KISHIOKA TAKAHIRO;HORIGUCHI YUSUKE;NISHIMAKI HIROKAZU;OHASHI TOMOYA;USUI YUKI;NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
UMEZAKI MAKIKO;KISHIOKA TAKAHIRO;HORIGUCHI YUSUKE;NISHIMAKI HIROKAZU;OHASHI TOMOYA;USUI YUKI |
| 分类号 |
G03F7/027;G03F7/20 |
主分类号 |
G03F7/027 |
| 代理机构 |
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