发明名称 SEMICONDUCTOR PROCESSING SYSTEM HAVING MULTIPLE DECOUPLED PLASMA SOURCES
摘要 <p>A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.</p>
申请公布号 WO2012154666(A1) 申请公布日期 2012.11.15
申请号 WO2012US36762 申请日期 2012.05.07
申请人 LAM RESEARCH CORPORATION;HOLLAND, JOHN, PATRICK;VENTZEK, PETER, L.G.;SINGH, HARMEET;GOTTSCHO, RICHARD 发明人 HOLLAND, JOHN, PATRICK;VENTZEK, PETER, L.G.;SINGH, HARMEET;GOTTSCHO, RICHARD
分类号 H01L21/306 主分类号 H01L21/306
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