SEMICONDUCTOR PROCESSING SYSTEM HAVING MULTIPLE DECOUPLED PLASMA SOURCES
摘要
<p>A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.</p>
申请公布号
WO2012154666(A1)
申请公布日期
2012.11.15
申请号
WO2012US36762
申请日期
2012.05.07
申请人
LAM RESEARCH CORPORATION;HOLLAND, JOHN, PATRICK;VENTZEK, PETER, L.G.;SINGH, HARMEET;GOTTSCHO, RICHARD
发明人
HOLLAND, JOHN, PATRICK;VENTZEK, PETER, L.G.;SINGH, HARMEET;GOTTSCHO, RICHARD