| 摘要 |
<p>A thin-film transistor that has a field-effect mobility of at least 25 cm2/(V·s), the active layer of said thin-film transistor being an oxide containing indium, gallium, and zinc in an atomic ratio in region 1, 2, or 3. Region 1: 0.58 = In/(In+Ga+Zn) = 0.68; 0.15 < Ga/(In+Ga+Zn) = 0.29 Region 2: 0.45 = In/(In+Ga+Zn) < 0.58; 0.09 = Ga/(In+Ga+Zn) < 0.20 Region 3: 0.45 = In/(In+Ga+Zn) < 0.58; 0.20 = Ga/(In+Ga+Zn) = 0.27</p> |
| 申请人 |
IDEMITSU KOSAN CO.,LTD.;ITOSE, MASAYUKI;NISHIMURA, MAMI;KAWASHIMA, HIROKAZU;SUNAGAWA, MISA;KASAMI, MASASHI;YANO, KOKI |
发明人 |
ITOSE, MASAYUKI;NISHIMURA, MAMI;KAWASHIMA, HIROKAZU;SUNAGAWA, MISA;KASAMI, MASASHI;YANO, KOKI |
