发明名称 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
摘要 A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.
申请公布号 US2012288691(A1) 申请公布日期 2012.11.15
申请号 US201113522147 申请日期 2011.01.13
申请人 IWATO KAORU;TARUTANI SHINJI;ENOMOTO YUICHIRO;KAMIMURA SOU;KATO KEITA;FUJIFILM CORPORATION 发明人 IWATO KAORU;TARUTANI SHINJI;ENOMOTO YUICHIRO;KAMIMURA SOU;KATO KEITA
分类号 G03F7/20;B32B3/10;G03F7/004;G03F7/075 主分类号 G03F7/20
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