发明名称 |
PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM |
摘要 |
A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.
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申请公布号 |
US2012288691(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201113522147 |
申请日期 |
2011.01.13 |
申请人 |
IWATO KAORU;TARUTANI SHINJI;ENOMOTO YUICHIRO;KAMIMURA SOU;KATO KEITA;FUJIFILM CORPORATION |
发明人 |
IWATO KAORU;TARUTANI SHINJI;ENOMOTO YUICHIRO;KAMIMURA SOU;KATO KEITA |
分类号 |
G03F7/20;B32B3/10;G03F7/004;G03F7/075 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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