| 摘要 |
Disclosed are a non-polar nitride-based light emitting device and a method for fabricating the same. The non-polar nitride-based light emitting device includes a substrate, a first-type semiconductor layer on the substrate, an active layer on the active layer, a second-type semiconductor layer on the active layer, a light extraction layer on the second-type semiconductor layer and including at least one layer including indium having a plurality of unit structures having an inverted pyramidal intaglio shape, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer.
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