发明名称 |
Semiconductor Processing System Having Multiple Decoupled Plasma Sources |
摘要 |
A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma. |
申请公布号 |
US2012289054(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201113104925 |
申请日期 |
2011.05.10 |
申请人 |
HOLLAND JOHN PATRICK;VENTZEK PETER L. G.;SINGH HARMEET;GOTTSCHO RICHARD;LAM RESEARCH CORPORATION |
发明人 |
HOLLAND JOHN PATRICK;VENTZEK PETER L. G.;SINGH HARMEET;GOTTSCHO RICHARD |
分类号 |
H01L21/3065;C23F1/08 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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