发明名称 MANUFACTURING METHOD OF MAGNETO-RESISTIVE ELEMENT
摘要 The present invention provides a manufacturing method of a magneto-resistive element capable of obtaining a higher MR ratio, in a method of forming a metal oxide layer (e.g., MgO layer) by oxidation treatment of a metal layer (e.g., Mg layer). An embodiment of the present invention includes the steps of; providing a substrate having a first ferromagnetic layer; fabricating a tunnel barrier layer on the first ferromagnetic layer; and forming a second ferromagnetic layer on the tunnel barrier layer. The step of fabricating the tunnel barrier layer includes; the steps of; depositing a first metal layer on the first ferromagnetic layer; oxidizing the first metal layer; depositing a second metal layer on the oxidized first metal layer; and performing heating treatment on the oxidized first metal layer and the second metal layer at a temperature at which the second metal layer boils.
申请公布号 US2012288963(A1) 申请公布日期 2012.11.15
申请号 US201213494797 申请日期 2012.06.12
申请人 NISHIMURA KAZUMASA;CANON ANELVA CORPORATION 发明人 NISHIMURA KAZUMASA
分类号 H01L43/12 主分类号 H01L43/12
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