发明名称 Method for repairing a semiconductor structure having a current-leakage issue
摘要 A method for repairing a semiconductor structure having a current-leakage issue includes finding a semiconductor structure having a current-leakage issue through application of a test voltage from an electric test device and applying an electric power stress to the semiconductor structure to melt a stringer or a bridge between two conductive elements or to allow the stringer or the bridge to be oxidized.
申请公布号 US2012288968(A1) 申请公布日期 2012.11.15
申请号 US201113106837 申请日期 2011.05.12
申请人 HSIEH MING-TENG;CHEN YI-NAN;LIU HSIEN-WEN 发明人 HSIEH MING-TENG;CHEN YI-NAN;LIU HSIEN-WEN
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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