发明名称 |
Method for repairing a semiconductor structure having a current-leakage issue |
摘要 |
A method for repairing a semiconductor structure having a current-leakage issue includes finding a semiconductor structure having a current-leakage issue through application of a test voltage from an electric test device and applying an electric power stress to the semiconductor structure to melt a stringer or a bridge between two conductive elements or to allow the stringer or the bridge to be oxidized.
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申请公布号 |
US2012288968(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201113106837 |
申请日期 |
2011.05.12 |
申请人 |
HSIEH MING-TENG;CHEN YI-NAN;LIU HSIEN-WEN |
发明人 |
HSIEH MING-TENG;CHEN YI-NAN;LIU HSIEN-WEN |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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