| 摘要 |
<p>Provided is a GGNMOS unit for anti-static protection, which has a regular polygon shape. The drain thereof is closed by a ring gate, the ring gate is surrounded by a source with a regular polygon shape concentric therewith, the outside of the source is provided with a concentric substrate ground area with a regular polygon shape with equal distance thereto, and both of them are separated uniformly by a field oxygen area. Correspondingly, also provided is an anti-static protection structure based on a GGNMOS unit. The present invention uses the method wherein the ring gate closes the drain and the source is surrounded by a concentric substrate ground area by changing the plane layout structure of the GGNMOS unit to make the series resistance of the base of the parasitic transistor equal everywhere. The anti-static protection structure in the present invention can start up each ESD protection device unit uniformly and simultaneously when static occurs, thus reaching high ESD protection ability higher than HBM 8 KV.</p> |
