| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows reduction in wiring resistance. <P>SOLUTION: A semiconductor device comprises a semiconductor substrate, and a first region and a second region provided on the semiconductor substrate. The first region includes first metal wiring formed in a first wiring layer on the semiconductor substrate and having a predetermined first width, second metal wiring formed in a second wiring layer above the first wiring layer and having the first width, and a first contact connecting the first metal wiring and the second metal wiring and having a second width less than or equal to the first width. The second region includes third metal wiring having a film thickness across from the first wiring layer to the second wiring layer and having a predetermined third width. <P>COPYRIGHT: (C)2013,JPO&INPIT |
