发明名称 |
POWER AMPLIFICATION DEVICE, AND INPUT BIAS VOLTAGE ADJUSTMENT METHOD FOR POWER AMPLIFICATION DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power amplification device and an input bias voltage adjustment method for a power amplification device which implement significantly improved time efficiency of adjustment of an input bias voltage. <P>SOLUTION: A bias voltage supply section feeds a bias voltage to a gate of a GaN-FET. An arithmetic control section calculates a difference in load current between different time points. A reference table describes a correspondence defined for the GaN-FET between an initial drain current change rate of a drain current changing from the start of a constantly maintained gate-source voltage and a change in gate-source voltage required to maintain the drain current at the start of the constantly maintained gate-source voltage after the lapse of a time. A reference control section applies the difference in load current to the drain current change rate in the reference table to retrieve the change in gate-source voltage. A bias voltage change control section controls the bias voltage supply section to change the gate bias voltage according to the change. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012227795(A) |
申请公布日期 |
2012.11.15 |
申请号 |
JP20110094672 |
申请日期 |
2011.04.21 |
申请人 |
TOSHIBA CORP |
发明人 |
DAIHI TOSHIYA;ITAGAKI HIROMU |
分类号 |
H03F3/24;H03F1/30;H03F3/193 |
主分类号 |
H03F3/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|