发明名称 POWER AMPLIFICATION DEVICE, AND INPUT BIAS VOLTAGE ADJUSTMENT METHOD FOR POWER AMPLIFICATION DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a power amplification device and an input bias voltage adjustment method for a power amplification device which implement significantly improved time efficiency of adjustment of an input bias voltage. <P>SOLUTION: A bias voltage supply section feeds a bias voltage to a gate of a GaN-FET. An arithmetic control section calculates a difference in load current between different time points. A reference table describes a correspondence defined for the GaN-FET between an initial drain current change rate of a drain current changing from the start of a constantly maintained gate-source voltage and a change in gate-source voltage required to maintain the drain current at the start of the constantly maintained gate-source voltage after the lapse of a time. A reference control section applies the difference in load current to the drain current change rate in the reference table to retrieve the change in gate-source voltage. A bias voltage change control section controls the bias voltage supply section to change the gate bias voltage according to the change. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012227795(A) 申请公布日期 2012.11.15
申请号 JP20110094672 申请日期 2011.04.21
申请人 TOSHIBA CORP 发明人 DAIHI TOSHIYA;ITAGAKI HIROMU
分类号 H03F3/24;H03F1/30;H03F3/193 主分类号 H03F3/24
代理机构 代理人
主权项
地址