| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the occurrence of degradation of a gate insulating film. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: burying an element isolation film 20 in an element isolation trench 102 after forming the element isolation trench 102 by using a hard mask; removing a silicon nitride film 210 of the hard mask; thinning a surface oxide film 200 of the hard mask; thickening the surface oxide film to form a re-oxidation film 202 by thermal oxidation of a silicon substrate 100; injecting a channel impurity into the silicon substrate located in a first element formation region 101 and a second element formation region 103 via the re-oxidation film 202; removing the re-oxidation film 202; and forming a gate insulating film 110 and a gate electrode 120 on the silicon substrate 100 located in the first element formation region 101. <P>COPYRIGHT: (C)2013,JPO&INPIT |
