发明名称 |
Liner Formation in 3DIC Structures |
摘要 |
An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.
|
申请公布号 |
US2012289062(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201213562101 |
申请日期 |
2012.07.30 |
申请人 |
LO CHING-YU;TU HUNG-JUNG;CHEN HAI-CHING;BAO TIEN-I;CHIOU WEN-CHIH;YU CHEN-HUA;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LO CHING-YU;TU HUNG-JUNG;CHEN HAI-CHING;BAO TIEN-I;CHIOU WEN-CHIH;YU CHEN-HUA |
分类号 |
H01L21/71 |
主分类号 |
H01L21/71 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|