发明名称 Semiconductor Device and Method of Forming Interconnect Structure for Encapsulated Die having Pre-Applied Protective Layer
摘要 A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.
申请公布号 US2012286422(A1) 申请公布日期 2012.11.15
申请号 US201213555531 申请日期 2012.07.23
申请人 SHIM II KWON;LIN YAOJIAN;CHOW SENG GUAN;STATS CHIPPAC, LTD. 发明人 SHIM II KWON;LIN YAOJIAN;CHOW SENG GUAN
分类号 H01L23/498;H01L21/56 主分类号 H01L23/498
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