发明名称 APPARATUS AND PROCESS FOR ATOMIC LAYER DEPOSITION
摘要 Provided is a substrate processing apparatus, such as an atomic layer deposition (ALD) chamber, comprising a substrate support on a swinging support arm and, optionally, a plurality of exhaust ducts located adjacent to but a distance from the gas distribution plate. One or more of the substrate processing apparatus may be a component of an integrated cluster tool to process multiple substrates concurrently.
申请公布号 WO2012118955(A3) 申请公布日期 2012.11.15
申请号 WO2012US27252 申请日期 2012.03.01
申请人 APPLIED MATERIALS, INC.;YUDOVSKY, JOSEPH 发明人 YUDOVSKY, JOSEPH
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址