| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has flexibility and resistance to physical change such as bending, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: A semiconductor device comprises: a plurality of transistors provided on a flexible substrate which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film, and an interlayer insulating film provided to cover the gate electrode; and a bending portion provided between the plurality of transistors. The bending portion is provided by filling an opening formed in the interlayer insulating film with material having a lower elastic modulus than that of the interlayer insulating film. In addition, material having a lower glass transition point than that of the interlayer insulating film or material having plasticity can be provided as material with which the opening is filled. <P>COPYRIGHT: (C)2013,JPO&INPIT |
