| 摘要 |
<p>A semiconductor lasing device (10) for emitting radiation at multiple distinct wavelengths, the device (10) comprising an active layer (16) having first portion (20) and a second portion (21), the first and second portions (20, 21) being separated by a Bragg grating (19) extending through the entire depth of the active layer (16), the first portion (20) defining a first lasing cavity (29) for emitting electromagnetic radiation at a first wavelengthλ1 and the first and second portions (20, 21) together defining a second lasing cavity (31) for emitting electromagnetic radiation at a second wavelengthλ2.</p> |
