| 摘要 |
A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m -plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an Al x Ga y In z N semiconductor (where x+y+z=1, x‰¥0, y‰¥0, and z‰¥0), and the electrode contains Mg, Zn and Ag. |
