| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a light-emitting diode of a vertical electrode structure, which improves the handling property of a wafer, makes the management easy in element dividing by dicing, and is capable of improving production efficiency. <P>SOLUTION: The method for manufacturing a light-emitting diode of a vertical electrode structure includes a lamination process to form a plurality of compound semiconductor layers 11 on a substrate 21, a planarization process to embed a resist layer 23 for planarization between the compound semiconductor layers 11, a seed layer forming process to form a seed layer 2, a plating process to form a plated layer 1, a part of which is segmented by a resist layer 22 for separation, and at the same time, to attach a temporary attaching substrate 24, a removing process to remove the resist layer 23 for planarization and the resist layer 22 for separation by peeling off the substrate 21, an electrode forming process to form an n-type electrode layer on an n-type semiconductor layer 8, a temporary attaching substrate removing process to remove the temporary attaching substrate 24, and a dicing process to cut the plated layer 1. <P>COPYRIGHT: (C)2009,JPO&INPIT |
