发明名称 PHOTOMASK BLANK, PHOTOMASK, METHODS OF MANUFACTURING THE SAME, AND METHOD OF FORMING MICROPATTERN
摘要 <p>In obtaining a photomask blank 1 by disposing a sputtering target in a vacuum chamber and forming thin films 3, 4, and 5 with a three-layer construction of CrN/CrC/CrON over a transparent substrate 2 by reactive sputtering, the thin films are formed in a mixed gas atmosphere containing helium, and the helium gas flux in the mixed gas is controlled such that the crystal grain diameter of the CrC thin film, which is the thickest film, will be 3 to 7 nm. This yields a photomask blank having thin films with low film stress, having good film quality, and which can be produced at a high yield in mass production. &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt;</p>
申请公布号 EP1022614(B1) 申请公布日期 2012.11.14
申请号 EP19990933200 申请日期 1999.07.30
申请人 HOYA CORPORATION 发明人 MITSUI, MASARU;YAMAGATA, HARUHIKO;USHIDA, MASAO
分类号 G03F1/54;C23C14/00;C23C14/06;G03F1/46;G03F1/50;G03F1/58 主分类号 G03F1/54
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