| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor is provided to improve element reliability by preventing the change of semiconductor characteristics of an active layer. CONSTITUTION: A gate electrode is formed on a substrate(S100). A gate insulating film is formed on the front of the substrate(S200). An active layer is formed on the gate insulating film using an oxide semiconductor(S300). An etch stopper is formed on the active layer(S400). A source electrode and a drain electrode are formed on the gate insulating film(S500). A protective film is formed on the gate insulating film(S600). [Reference numerals] (S100) Forming a gate electrode on a substrate; (S200) Forming a gate insulating film on the front of the substrate; (S300) Forming an active layer on the gate insulating film using an oxide semiconductor which is processed by N2O gas; (S400) Forming an etch stopper on the active layer; (S500) Forming a source electrode and a drain electrode on the gate insulating film; (S600) Forming a protective film on the front of the gate insulating film
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