| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the generation of a defect by forming a self alignment mask pattern by burying a material layer for a self-alignment mask. CONSTITUTION: A hard mask film(21) is formed on a substrate(20). A first area and a second area are defined on the substrate. A mask pattern(22) is formed on the hard mask film. The second area is exposed by etching the hard mask film using the mask pattern as an etching barrier. A first semiconductor process is performed using a hard mask pattern. A self-alignment mask pattern is formed by burying a material layer for a self-alignment mask on the second area. The hard mask pattern is etched using the self-alignment mask pattern as the etching barrier. A second semiconductor process is preformed using the self-alignment mask pattern.</p> |
