| 摘要 |
<p>This invention provides a solution for growing a charge-transfer complex salt M + A - onto the surface of a metal M, comprising:
(a) an organic solvent comprising one nitrile function,
(b) an electron acceptor molecule A;
(c) a co-solvent wherein said at least one electron acceptor molecule A is more soluble than said charge-transfer complex salt M + A - , and
(d) a salt additive selected from the group consisting of M + Y - and E + A - wherein Y - and E + are non-reactive counter-ions, A - is the anion corresponding to said acceptor molecule A and M + is the cation corresponding to the metal M. This invention also provides a CMOS wafer comprising a metal layer M, an insulator layer (4) above said metal layer M and via holes (1) extending through said insulator layer (4) and through a portion Hc of said metal layer M, said via holes being at least partially filled with a complex charge transfer salt M + A - layer of thickness H MA , wherein A - is the anion corresponding to an acceptor molecule A, and wherein said portion H C has a depth of 10 to 50 nm.</p> |
