发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide: a positive photosensitive resin composition having high sensitivity; a method for producing a cured relief pattern using the composition; and a semiconductor device having the cured relief pattern. <P>SOLUTION: The positive photosensitive resin composition comprises (A) 100 parts by mass of a polymer soluble in an aqueous alkali solution, (B) 1-50 parts by mass of a photoacid generator, (C) 0.01-30 parts by mass of a sulfonic acid anhydride, and (D) 0.1-70 parts by mass of a crosslinking agent. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP5072462(B2) 申请公布日期 2012.11.14
申请号 JP20070181619 申请日期 2007.07.11
申请人 发明人
分类号 G03F7/004;G03F7/023;G03F7/40;H01L21/027 主分类号 G03F7/004
代理机构 代理人
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