发明名称 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
摘要 <p>Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.</p>
申请公布号 EP2521941(A1) 申请公布日期 2012.11.14
申请号 EP20110731870 申请日期 2011.01.07
申请人 FUJIFILM CORPORATION 发明人 ENOMOTO, YUICHIRO;TARUTANI, SHINJI;KAMIMURA, SOU;IWATO, KAORU;KATO, KEITA;SHIBUYA, AKINORI
分类号 G03F7/004;C08F20/34;G03F7/038;G03F7/039;G03F7/32;G03F7/38;H01L21/027 主分类号 G03F7/004
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