| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to maximize the high integration of the semiconductor device by rapidly processing high capacity data. CONSTITUTION: A target layer(200) is formed on a substrate(100) A metal oxide layer(300) is formed on the substrate. A metal oxide pattern is formed by etching the metal oxide layer. A buried material is formed on the substrate. A second hard mask pattern is formed on the buried material layer.</p> |
