METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device, a substrate processing method, and a substrate processing apparatus are provided to improve quality of a substrate device by forming an insulating layer having high insulation capacity. CONSTITUTION: Gas which contains a predetermined element is provided to a substrate. Carbon containing gas(C3H6) is provided to the substrate. Nitrogen containing gas(NH3) is provided to the substrate. A carbonitried layer is formed on the substrate. An oxidized carbonitried layer is formed on the carbonitried layer. A processing container accepts the substrate. [Reference numerals] (AA) First cycle; (BB) Second cycle; (CC) N cycle; (DD) Silicon containing gas(HCD); (EE) Carbon containing gas(C3H6); (FF) Nitrogen containing gas(NH3); (GG) Inactivity gas(N2)