| 摘要 |
As a discrete semiconductor chip, there has been known one that enables flip-chip mounting by providing first and second electrodes in a current path above a first surface of a semiconductor substrate. However, there is a problem that a horizontal current flow in the substrate increases resistance components. A first electrode and a second electrode, which are connected to an element region, are provided above a first surface. Moreover, a thick metal layer having corrosion resistance and oxidation resistance and also having a low resistance is provided above a second surface. Thus, resistance components of a current flowing in a horizontal direction of a substrate are reduced. Moreover, by appropriately selecting a thickness of the thick metal layer, a resistance value of a device can be reduced while suppressing a cost increase. Furthermore, by adopting Au as the thick metal layer, defects such as discoloration of the thick metal layer with time can be prevented. |
