发明名称 |
Poly-Si thin film transistor and organic light-emitting display having the same |
摘要 |
A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively. |
申请公布号 |
US8309404(B2) |
申请公布日期 |
2012.11.13 |
申请号 |
US201113173128 |
申请日期 |
2011.06.30 |
申请人 |
YIN HUAXIANG;NOGUCHI TAKASHI;LIM HYUK;XIANYU WENXU;CHO HANS S.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YIN HUAXIANG;NOGUCHI TAKASHI;LIM HYUK;XIANYU WENXU;CHO HANS S. |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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