发明名称 Light emitting device and manufacturing method thereof
摘要 A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19, exposing a portion of the first electrode 18c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).
申请公布号 US8309976(B2) 申请公布日期 2012.11.13
申请号 US201113035029 申请日期 2011.02.25
申请人 YAMAZAKI SHUNPEI;NODA TAKESHI;HIGAKI YOSHINARI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;NODA TAKESHI;HIGAKI YOSHINARI
分类号 H01L51/52;H01L27/32 主分类号 H01L51/52
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