发明名称 Method for generating layout pattern of semiconductor device and layout pattern generating apparatus
摘要 In a layout pattern generating method, a specific rework cell used for edition is specified among rework cells and fill cells which are arranged in a semiconductor chip area and a specific pattern of a predetermined shape is generated in a wiring layer for the specific rework cell. A dummy wiring pattern is arranged in at least a part of the wiring layer of and the fill cell and un-specific rework cells among the rework cell other than the specific rework cell. The specific pattern is deleted from the wiring layer for the specifying rework cell. A wiring pattern is arranged in the wiring layer for the specific rework cell by wiring the specific rework cell as a logic cell.
申请公布号 US8312397(B2) 申请公布日期 2012.11.13
申请号 US20090585085 申请日期 2009.09.02
申请人 INOUE TOMOYUKI;RENESAS ELECTRONICS CORPORATION 发明人 INOUE TOMOYUKI
分类号 G06F17/50;H01L23/48;H01L27/18 主分类号 G06F17/50
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