发明名称 |
Semiconductor laser, semiconductor laser device, and fabrication method of semiconductor laser |
摘要 |
A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductive type formed on the active region; and an intermediate semiconductor layer of a first conductive type or a second conductive type formed under the first semiconductor multilayer reflector or above the second semiconductor multilayer reflector. An oxidized region formed by oxidizing a part of the intermediate semiconductor layer and an un-oxidized region contacting with the oxidized region are formed in the intermediate semiconductor layer, the un-oxidized region is electrically connected to the first or second semiconductor multilayer reflector, and a beam generated in the active region is reflected at a boundary between the oxidized region and the un-oxidized region to a direction parallel to a principal surface of the substrate, and is emitted from a side surface of the intermediate semiconductor layer. |
申请公布号 |
US8311073(B2) |
申请公布日期 |
2012.11.13 |
申请号 |
US20100879541 |
申请日期 |
2010.09.10 |
申请人 |
TAKEDA KAZUTAKA;KONDO TAKASHI;OZAWA HIDEAKI;FUJI XEROX CO., LTD. |
发明人 |
TAKEDA KAZUTAKA;KONDO TAKASHI;OZAWA HIDEAKI |
分类号 |
H01S3/08 |
主分类号 |
H01S3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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