发明名称 Semiconductor device and wafer structure
摘要 A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.
申请公布号 US8310065(B2) 申请公布日期 2012.11.13
申请号 US20110985344 申请日期 2011.01.06
申请人 WU HUI-MIN;LAN BANG-CHIANG;HUANG CHIEN-HSIN;WANG KUAN-YU;SU CHAO-AN;SU TZUNG-I;UNITED MICROELECTRONICS CORP. 发明人 WU HUI-MIN;LAN BANG-CHIANG;HUANG CHIEN-HSIN;WANG KUAN-YU;SU CHAO-AN;SU TZUNG-I
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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