发明名称 |
Semiconductor devices having narrow conductive line patterns and related methods of forming such semiconductor devices |
摘要 |
Semiconductor devices and methods of forming semiconductor devices are provided in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using double patterning. The semiconductor device includes a plurality of conductive lines each including a first line portion and a second line portion, where the first line portion extends on a substrate in a first direction, the second line portion extends from one end of the first line portion in a second direction, and the first direction is different from the second direction; a plurality of contact pads each of which is connected with a respective conductive line of the plurality of conductive lines via the second line portion of the corresponding conductive line; and a plurality of dummy conductive lines each including a first dummy portion extending from a respective contact pad of the plurality of contact pads, in parallel with the corresponding second line portion in the second direction. |
申请公布号 |
US8310055(B2) |
申请公布日期 |
2012.11.13 |
申请号 |
US20090645820 |
申请日期 |
2009.12.23 |
申请人 |
PARK YOUNG-JU;MIN JAE-HO;KIM MYEONG-CHEOL;KIM DONG-CHAN;SIM JAE-HWANG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-JU;MIN JAE-HO;KIM MYEONG-CHEOL;KIM DONG-CHAN;SIM JAE-HWANG |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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