| 发明名称 |
Nanowire FET having induced radial strain |
| 摘要 |
A device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads and a gate including a gate conductor surrounding the nanowire and a fully silicided material surrounding the gate conductor to radially strain the nanowire. |
| 申请公布号 |
US8309991(B2) |
申请公布日期 |
2012.11.13 |
| 申请号 |
US20090631218 |
申请日期 |
2009.12.04 |
| 申请人 |
BANGSARUNTIP SARUNYA;COHEN GUY;MURRAY CONAL E.;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BANGSARUNTIP SARUNYA;COHEN GUY;MURRAY CONAL E.;SLEIGHT JEFFREY W. |
| 分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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