发明名称 Piezoelectric thin film element and piezoelectric thin film device including the same
摘要 A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (NaxKyLiz)NbO3 (0≦̸x≦̸1, 0≦̸y≦̸1, 0≦̸z≦̸0.2, x+y+z=1); and an upper electrode laminated thereon, wherein the piezoelectric thin film has a crystal structure of any one of a pseudo-cubic crystal, a tetragonal crystal, or an orthorhombic crystal, or has a crystal structure of coexistence of at least two of the pseudo-cubic crystal, the tetragonal crystal, or the orthorhombic crystal, and in such crystal structures, there is a coexistence of (001) oriented crystal grains oriented in (001) direction, and (111) oriented crystal grains oriented in (111) direction, with an angle formed by at least one of the crystal axes of the crystal grains and a normal line of the substrate surface set to be in a range of 0° to 10°.
申请公布号 US8310135(B2) 申请公布日期 2012.11.13
申请号 US20100797340 申请日期 2010.06.09
申请人 SUENAGA KAZUFUMI;SHIBATA KENJI;SATO HIDEKI;NOMOTO AKIRA;HITACHI CABLE, LTD. 发明人 SUENAGA KAZUFUMI;SHIBATA KENJI;SATO HIDEKI;NOMOTO AKIRA
分类号 H01L41/187 主分类号 H01L41/187
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