发明名称 |
MOSFET switch with embedded electrostatic charge |
摘要 |
A vertical device structure includes a volume of semiconductor material, laterally adjoining a trench having insulating material on sidewalls thereof. A gate electrode within the trench is capacitively coupled through the insulating material to a first portion of the semiconducting material. Some portions of the insulating material contain fixed electrostatic charge in a density high enough to invert a second portion of the semiconductor material when no voltage is applied. The inverted portions can be used as induced source or drain extensions, to assure that parasitic are reduced without increasing on-resistance. |
申请公布号 |
US8310001(B2) |
申请公布日期 |
2012.11.13 |
申请号 |
US20090394107 |
申请日期 |
2009.02.27 |
申请人 |
DARWISH MOHAMED N.;ZENG JUN;MAXPOWER SEMICONDUCTOR INC. |
发明人 |
DARWISH MOHAMED N.;ZENG JUN |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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